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Transistor Module High Power Switching Use Insulated Type
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M38004S7-XXXSS : 8-bit Single-chip Microcomputer
M38020E4DXXXSP : RAM Size: 192bytes; Single-chip 8-bit CMOS Microcomputer
M38024M3-XXXFP : RAM Size: 640bytes; Single-chip 8-bit CMOS Microcomputer
M38062M2DXXXGP : RAM Size: 384bytes; Single-chip 8-bit CMOS Microcomputer
M38065MAAXXXFP : RAM Size: 768bytes; Single-chip 8-bit CMOS Microcomputer
M38220M3MXXXFS : RAM Size: 192 Bytes; Single-chip 8-bit CMOS Microcomputer
M38258EB-FS : RAM Size: 1536 Bytes; Single-chip 8-bit CMOS Microcomputer
M38276E7MXXXHP : Single-chip 8-bit CMOS Microcomputer
M38506E5-XXXFP : RAM Size:896 Bytes; Single-chip 8-bit Microcomputer
M38862E2AHP : RAM Size: 384bytes; Single-chip 8-bit CMOS Microcomputer
ML920J40S-16 : 1550,1520nm Ingaasp FP Laser Diodes
MGFC40V3742_04 : 6.4 - 7.2ghz BAND 10W Internally Matched GaAs FET
2SA1215 : . Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2921) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO PC Tj Tstg to +150 Unit °C Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=10V, f=1MHz VCC (V) 12 IC (A) 5 VB2 (V) 5 IB1 (mA) 500 IB2 (mA) 500 ton (µs) 0.25typ tstg (µs) 0.85typ tf (µs) 0.2typ 125°C DC Curr ent Gain.
2SC3749 : NPN Transistor, For 500V/3A Switching Regulator Applications. High breakdown voltage and high reliability. Fast switching speed. Wide ASO. Adoption of MBIT process. Micaless package facilitating mounting. s Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature.
CM25AD05-24H : Medium Power Switching Use Flat Base, Insulated Type. MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE ¡IC 25A ¡VCES 1200V ¡Insulated Type ¡CIB Module 3 Inverter + 3 Converter + Brake Thyristor + Thermistor + Current shunt resistor APPLICATION & DC motor controls, General purpose inverters Symbol Parameter G-E Short C-E Short = 25°C PULSE = 25°C PULSE = 25°C Conditions Collector-emitter voltage VCES.
ICTE-10 : Transient Voltage Suppressor, Package : CASE-1.
SIDC06D120F6 : HV Chips. Used For Fast IGBT2. : 1200V EMCON technology 120 µm chip soft, fast switching low reverse recovery charge small temperature coefficient This chip is used for: EUPEC power modules and discrete devices Applications: SMPS, resonant applications, drives MECHANICAL PARAMETER: Raster size Area total / active Anode pad size Thickness Wafer size Flat position Max. possible chips.
PBSS301PD : 20 V, 4 A PNP low VCEsat (BISS) transistor PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD plastic package. NPN complement: PBSS301ND. Very low collector-emitter saturation resistance Ultra low collector-emitter saturation voltage 4 A continuous collector current Up to 15 A peak current High efficiency due to less.
DCX122LH : Pre-biased NPN/PNP Transistor Complex Arrays. COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR Epitaxial Planar Die Construction Built-In Biasing Resistors Lead Free By Design/RoHS Compliant (Note 3) Case: SOT-563 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C Terminals: Finish - Matte Tin annealed.
CM04ED270JO3 : CAPACITOR, MICA, 500 V, 0.000027 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Applications: General Purpose ; Electrostatic Capacitors: Mica ; Capacitance Range: 2.70E-5 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 500 volts ; Mounting Style: Through Hole ; Operating Temperature: -55 to 150 C (-67 to 302 F).
GBI-4020-121R : 1 ELEMENT, 0.125 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: WRAPAROUND ; Application: General Purpose ; Inductance Range: 0.1250 microH ; Inductance Tolerance: 15 (+/- %) ; DCR: 3.50E-4 ohms ; Testing Frequency: 1000 kHz ; Operating Temperature: -40 to 125 C (-40 to 257 F).
H1100NLT : DATACOM TRANSFORMER FOR 10/100 BASE-TX; ETHERNET APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer ; Operating Temperature: 0 to 70 C (32 to 158 F).
MOX-F : RESISTOR, METAL GLAZE/THICK FILM, 25 W, 0.5; 1; 2; 5 %, 25; 50 ppm, 1000 ohm - 800000000000 ohm, CHASSIS MOUNT. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: Bolt-on Chassis, ROHS COMPLIANT ; Operating DC Voltage: 20000 volts ; Operating Temperature: -65 to 180 C (-85 to 356 F).
PL1374T : TELECOM TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: Telecom ; Mounting: Chip Transformer ; Operating Temperature: -55 to 125 C (-67 to 257 F).
PM8910UF+/-10%100V : CAPACITOR, METALLIZED FILM, POLYESTER, 100 V, 10 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polyester ; Capacitance Range: 10 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 100 volts ; Mounting Style: Through Hole ; Operating Temperature:.
RC0201FR-071.02R : RESISTOR, METAL GLAZE/THICK FILM, 0.05 W, 1 %, 350 ppm, 1.02 ohm, SURFACE MOUNT, 0201. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 0201, CHIP, ROHS COMPLIANT ; Resistance Range: 1.02 ohms ; Tolerance: 1 +/- % ; Temperature Coefficient: 350 Â±ppm/Â°C.
RR0306P-1000-D : RESISTOR, METAL FILM, 0.05 W, 0.5 %, 25 ppm, 100 ohm, SURFACE MOUNT, 0201. s: Category / Application: General Use ; Technology / Construction: MetalFilm ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 0201, CHIP, ROHS COMPLIANT ; Resistance Range: 100 ohms ; Tolerance: 0.5000 +/- % ; Temperature Coefficient: 25 Â±ppm/Â°C ; Power Rating:.
SOT-DIV23 : RESISTOR, NETWORK, FILM, DIVIDER, 1 W, SURFACE MOUNT. s: Configuration: Chip Array ; Category / Application: General Use ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), SOT23, SOT-23, LEAD/ROHS COMPLIANT ; Operating DC Voltage: 100 volts ; Operating Temperature: -55 to 125 C (-67 to 257 F).
VTS40100CT-E3 : 20 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB. s: Arrangement: Common Catode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, EFFICIENCY ; IF: 20000 mA ; RoHS Compliant: RoHS ; Package: LEAD FREE, PLASTIC PACKAGE-3 ; Pin Count: 3 ; Number of Diodes: 2.
2SC5001F5/Q : 10000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: NPN.
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Stock Status: 33936
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