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FEATURES:● Organized as 64K x8/ 128K x8 / 256K x8● 4.5-5.5V Read Operation● Superior Reliability- Endurance: At least 1000 Cycles- Greater than 100 years Data Retention● Low Power consumption- Active Current: 20mA(typical)- Standby Current: 10μA (typical)● Fast Read Access Time- 70ns● Fast Byte-Program Operation- Byte-Program Time: 20 us (typical)- Chip Program Time:1.4 seconds (typical) for sST27SF5122.8 seconds (typical) for ssT27SF0105.6 seconds (typical) for sST27SF020● Electrical Erase Using Programmer- Does not require UVsource- Chip-Erase Time: 100 ms (typical)● TTL I/O compatibility● JEDEC Standard Byte-wide EPROM Pinouts● Packages Available- 32-lead PLCC- 32-lead TSOP(8mm x 14mm)- 28-pin PDIP for ssT27SF512- 32-pin PDIP for SST27SF010/020● All non-Pb (lead-free) devices are RoHS compliantPRODUCT DESCRIPTIONThe SST27SF512/010/020 are a 64K x8/ 128K x8/256Kx8 CMOS, Many-Time Programmable (MTP) low costflash, manufactured with SST’s proprietary, high performance SuperFlash technology.The split-gate cell designand thick oxide tunneling injector attain better reliability andmanufacturability compared with alternate approaches.These MTP devices can be electrically erased and programmed at least 1000 times using an external programmer with a 12V power supply.They have to be erased priorto programming.These devices conform to JEDEC standard pinouts for byte-wide memories.Featuringhigh-performanceByte-Program,theSST27SF512/010/020 provide a Byte-Program time of 20μs. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with anendurance of at least 1000 cycles. Data retention is rated atgreater than 100 years.The SST27SF512/010/020 are suited for applications thatrequire infrequent writes and low power nonvolatile storage.These devices will improve flexibility,efficiency,andperformance while matching the low cost in nonvolatileapplications that currently use UV-EPROMs, OTPs, andmask ROMs.To meet surface mount and conventional through holerequirements,the sST27SF512 are offered in32-leadPLCC, 32-lead TSOP, and 28-pin PDIP packages. TheSST27SF010/020 are offered in 32-pin PDIP,32-leadPLCC, and 32-lead TSOP packages. Device OperationThe SST27SF512/010/020 are a low cost flash solutionthat can be used to replace existing UV-EPROM,OTP,and mask ROM sockets.These devices are functionally(read and program) and pin compatible with industrystandard EPROM products. In addition to EPROM functionality,these devices also support electrical Eraseoperation via an external programmer. They do notrequire a UVsource to erase, and therefore the packages do not have a window.ReadThe Read operation of the sST27SF512/010/020 is controlled by CE# and OE#.Both CE# and OE# have to be lowfor the system to obtain data from the outputs.Once theaddress is stable, the address access time is equal to thedelay from CE# to output (TCE). Data is available at the output after a delay of TCEfrom the falling edge of OE#,assuming that CE# pin has been low and the addresseshave been stable for at least TCE-TOE. When the CE# pin ishigh, the chip is deselected and a typical standby current of10μA is consumed.OE# is the output control and is usedto gate data from the output pins.The data bus is in highimpedance state when either CE# or OE# is high.Byte-Program OperationThe SST27SF512/010/020 are programmed by using anexternalprogrammer.Theprogrammingmode forSST27SF010/020 is activated by asserting 11.4-12V onVPPpin, VDD= 4.5-5.5V, VILon CE# pin, and VIHon OE#pin. The programming mode for SST27SF512 is activatedby asserting 11.4-12V on OE#NPPpin, VDD= 4.5-5.5V, and VILon CE# pin. These devices are programmed byte-by-byte with the desired data at the desired address usinga single pulse (CE# pin low for SST27SF512 and PGM#pin low for SST27SF010/020) of 20μs. Using the MTP programming algorithm, the Byte-Programming process continues byte-by-byte until the entire chip has beenprogrammed.Chip-Erase OperationThe only way to change a data from a“0* to“1”is by electrical erase that changes every bit in the device to“1. Unliketraditional EPROMs, which use UV light to do the Chip-Erase, the SST27SF512/010/020 uses an electrical Chip-Erase operation. This saves a significant amount of time(about 30 minutes for each Erase operation). The entirechip can be erased in a single pulse of 100 ms (CE# pinlow for SST27SF512 and PGM# pin for SST27SF010/020). In order to activate the Erase mode for SST27SF010/020, the 11.4-12V is applied to VPPand Ag pins, VDD=4.5-5.5V, VILon CE# pin, and VIHon OE# pin. In order to activate Erase mode for SST27SF512, the 11.4-12V is appliedto OE#NPPand Ag pins, VDD= 4.5-5.5V, and VILon CE#pin. All other address and data pins are dont care. Thefalling edge of CE# (PGM# for SST27SF010/020) will startthe Chip-Erase operation. Once the chip has been erased,all bytes must be verified for FFH.Product Identification ModeThe Product Identification mode identifies the devices asthe ssT27SF512, SST27SF010 and SST27SF020 andmanufacturer as SST.This mode may be accessed by thehardware method.To activate this mode for sST27SF010/020, the programming equipment must force VH(11.4-12V)on address Ag with VPPpin at VDD(4.5-5.5V) or VSS.Toactivate this mode for ssT27SF512, the programmingequipment must force VH(11.4-12V) on address A9withOE#VPPpin at VIL. Two identifier bytes may then besequenced from the device outputs by toggling address lineA0.
Features● UL Certified No.E209204(UL1557)● 600V-10 A 3-Phase IGBT Inverter with Integral GateDrivers and Protection● Low-Loss, Short-Circuit Rated IGBTs● Low Thermal Resistance Using Ceramic Substrate● Dedicated Vs Pins Simplify PCB Layout● Separate Open-Emitter Pins from Low-Side IGBTs forThree-Phase Current Sensing● Single-Grounded Power Supply● Isolation Rating: 2500 Vrms/ min.Applications● Motion Control - Home Appliance / Industrial MotorGeneral DescriptionFSBS10CH60 is a Motion SPMR3 module providing afully-featured, high-performance inverter output stagefor AC Induction, BLDC, and PMSM motors.These modules integrate optimized gate drive of the built-in IGBTsto minimize EMIand losses, while also providing multiple on-module protection features including under-voltage lockouts, over-current shutdown, and fault reporting.The built-in, high-speed HVIC requires only a single supply voltage and translates the incoming logic-level gateinputs to the high-voltage, high-current drive signalsrequired to properly drive the modules internal IGBTs.Separate negative IGBT terminals are available for eachphase to support the widest variety of control algorithms.
Features● Usable Gain to 5.5 GHz● High Gain:32.5 dB Typical at 0.1 GHz22.5 dB Typical at 1.0 GHz● Low Noise Figure:3.3 dB Typical at 1.0 GHz● Surface Mount PlasticPackage● Tape-and-Reel PackagingOption AvailableDescriptionThe MSA-0886 is a high performance silicon bipolar MonolithicMicrowave Integrated Circuit(MMIC) housed in a low cost,surface mount plastic package.This MMIC is designed for use as ageneral purpose 50Ωgain blockabove 0.5GHz and can be used asa high gain transistor below thisfrequency. Typical applicationsinclude narrow and moderate bandIF and RF amplifiers in commercial and industrial applications.The MSA-series is fabricated usingHPs 10 GHz fT,25 GHz f MAX,silicon bipolar MMIC processwhich uses nitride self-alignment,ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
Features● Low Total Harmonic Distortion (THD)● Precise Adjustable Output Over-Voltage Protection● Open-Feedback Protection and Disable Function● Zero Current Detector● 150μs InternalStart-up Timer● MOSFET Over-Current Protection● Under-Voltage Lockout with 3.5V Hysteresis● Low Start-up (40μA) and Operating Current (1.5mA)● Totem Pole Output with High State Clamp● +500/-800mA Peak Gate Drive Current● 8-Pin DIP or 8-Pin SOPApplications● Adapter● Ballast● LCD TV,CRT TV● SMPSDescriptionThe FAN7529 is an active power factor correction (PFC)controller for boost PFC applications that operates in critical conduction mode (CRM).It uses the voltage modePWM that compares an internal ramp signal with theerror amplifier output to generate MOSFET turn-off signal. Because the voltage-mode CRM PFC controller doesnot need rectified AC line voltage information, it saves thepower loss of the input voltage sensing network necessary for the current-mode CRM PFC controller.FAN7529 provides many protection functions, such asover-voltage protection, open-feedback protection, over-current protection, and under-voltage lockout protection.The FAN7529 can be disabled if the INVpin voltage islower than 0.45V and the operating current decreases to65μA. Using a new variable on-time control method,THD is lower than the conventionalCRM boost PFC ICs.
Introduce this module:The6DI30B-050 is a power transistor module from Fuji Semiconductor. The components from the Fuji Semiconductor have won the confidence of the almost all players of power electronics. With its ability of High Gain, it can fit to most challenging functions of electronics industry.The included structure of freewheeling diode gives you advantage of different safeties with most common problems like Over Current and Voltage. The package contains good property of insulation so you don’t have to worry much about safety of internal componentsSome Core parameters of the module●Max allowable voltage across collector base junction: 600V(ICBO = 1mA)●Max allowable voltage across collector emitter junction : 450V(ICEO = 1mA)●Max allowable voltage across emitter base junction : 6V(IEBO = 100mA)●Collector – Base cutoff current : 1.0mA(VCBO = 600V)●Emitter – Base cutoff current : 200mA(VEBO =6V)●Collector Emitter Saturation Voltage : 2.0V(IC=150A,IB=4A)●Base Emitter Saturation Voltage ; 2.5V(IC=150A,IB=4A)●DC Current Gain : 100(IC=150A,VCE=5V)How it use in the work(machine, daily life), AC Motor Control Circuit(Image courtesy of Freescale semiconductor Application Note AN 1524)Air Conditioner CircuitThese types of IC are also being used in Air Conditioner. The data of the Air Conditioner Is not available yet
Description● With TO-220Fa package● Complement to type 2SB951/951A● High DC current gain● High-speed switching
Introduction:IXGN60N60C2D1 is an International Standard Package miniBLOC. It has an Aluminum Nitride Isolation which makes gives it a high Power Dissipation property. It poses an anti-Parallel Ultra-Fast Diode for voltage isolation of range of 3000 V which leads to minimum On-State Conduction Losses.Features: ·VCESwhen TJ= 25℃to 150℃, the maximum voltage, 600V.·VCGRwhen TJ= 25℃to 150℃, RGE = 1MΩ, the maximum rating, 600V.·IC110when TC= 110℃, its maximum rating will be 60A.·ICMwhen TC= 25℃, 1ms, 300A will be the maximum rating.·VISOL50/60Hz t = 1min 2500V·Its case collectors capacitance is low( 50pF).·Its indulgent package is low ( 5nH).Uses/Application: The IXGN60N60C2D is one of the primary electrical module use in circuits such as·Production of DC choppers.·Uninterruptible Power Supplies (UPS) are created with IXGN60N60C2D1.·Switch-Mode and Resonant-Mode Power Supplies are done using IXGN60N60C2D1.
Description● Function and pinout compatible with FCT, and F logic● FCT-C speed at 4.2 ns max. (Com’l),FCT-A speed at 5.2 ns max. (Com’l)● Reduced VOH(typically = 3.3V) versions of equivalentFCT functions● Edge-rate control circuitry for signicantly improvednoise characteristics● Power-off disable feature● ESD 2000VFeatures● Matched rise and fall times● Extended commercial range of±40℃to +85℃● Fully compatible with TTL input and output logic levels● Sink current64 mA (Com’l), 32 mA (Mil)Source current 32 mA (Com’l), 12 mA (Mil)
General DescriptionThe ISL9V3040D3S, ISL9V3040S3s,ISL9V3040P3, andISL9V3040S3 are the next generation ignition IGBTs that offeroutstanding SCIScapability in the space saving D-Pak (TO-252), aswell as the industry standard D2-Pak (TO-263), and TO-262 and TO-220 plastic packages.This device is intended for use in automotiveignition circuits, specifically as a coil driver. Internal diodes providevoltage clamping without the need for external components.EcoSPARKTMdevices can be custom made to specific clampvoltages. Contact your nearest Fairchild sales office for moreinformation.Formerly Developmental Type 49362Applications● Automotive Ignition Coil Driver Circuits● Coil- On Plug ApplicationsFeatures● Space saving D-Pak package availability● SCISEnergy = 300mJ at TJ= 25℃● Logic Level Gate Drive
DESCRIPTIONThe RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for12.5volt mobile radios that operate in the 154- to 162MHz range.The battery can be connected directly to the drain of theenhancement-mode MOSFET transistors.The output power anddrain current increase as the gate voltage increases. With a gatevoltage around 3.0V(minimum), output power and drain currentincreases substantially.The nominal output power becomesavailable at 4V(typical) and 5V (maximum).At VGG=5V, the typicalgate current is 1mA.This module is designed for non-linear FM modulation.FEATURES● Enhancement-Mode MOSFET Transistors(IDD=0@VDD=12.5V, VGG=0V)● Pout33W,nT50%@VDD=12.5V,VGG=5V,Pin=10mW● Broadband Frequency Range: 154-162MHz● Low-Power Control Current IGG=1mA(typ) at VGG=5V● Module Size: 46 x 14.4 x 6.3 mmRoHS COMPLIANCE● RA33H1516M1-201 is a RoHS compliant product.● RoHS compliance is indicate by the letter G after the Lot Marking.● This product include the lead in the Glass of electronic parts and the lead inelectronic Ceramic parts.However, it is applicable to the following exceptions of RoHS Directions.1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescenttubes.2.Lead in electronic Ceramic parts.
FEATURES● Trench MOSSchottky technology● Low forward voltage drop, low power losses● High efficiency operation● Solder dip 275℃max.10 s, per JESD 22-B106● Compliant to RoHS directive 2002/95/EC and inaccordance to WEEE 2002/96/EC● Halogen-free according to IEC 61249-2-21 definitionTYPICAL APPLICATIONSFor use in high frequency rectifier of switching mode powersupplies, freewheeling diodes,dc-to-dc converters orpolarity protection application.MECHANICAL DATACase: DO-201ADMolding compound meets UL 94 V-0 flammability ratingBase P/N-M3 - halogen-free and RoHS compliant, commercial gradeTerminals: Matte tinplated leads,solderable perJ-STD-002 and JESD 22-B102M3 suffix meets JESD 201 class 1A whisker testPolarity: Color band denotes the cathode end
600V,SMPS Series N-Channel IGBT withAnti-Parallel Hyperfast DiodeThe HGTG7N60A4D, HGTP7N6OA4D andHGT1S7N6OA4DS are MOSgated high voltage switchingdevices combining the best features of MOSFETs andbipolar transistors.These devices have the high inputimpedance of a MOSFET and the low on-state conductionloss of a bipolar transistor.The much lower on-state voltagedrop varies only moderately between 25℃and 150℃.TheIGBT used is the development type TA49331.The diodeused in anti-parallel is the development type TA49370.This IGBT is ideal for many high voltage switchingapplications operating at high frequencies where lowconduction losses are essential. This device has beenoptimized for high frequency switch mode powersupplies.Formerly Developmental Type TA49333.Features● 100kHz Operation At 390V,7A● 200kHz Operation At 390V, 5A● 600VSwitching SOA Capability● Typical Fall Time. . . . . . . . . . . . . ... . 75ns at TJ= 125℃● Low Conduction Loss● Temperature Compensating SABERTMModel
DESCRIPTION● High Collector-Emitter Breakdown Voltage-V(BR)CEO= -200V (Min)● Complement to Type 2SC3416APPLICATIONS● Designed for color TV chroma output, high-voltage driverapplications.
DescriptionThese high-speed optocouplers are designed for use in analog or digital interface applications that require highvoltage isolation between the input and output. Applications include line receivers that require high common-mode transient immunity, and analog or logic circuits that require input-to-output electrical isolation.The 6N135,6N136, and HCPL4502 optocouplers each consists of a light-emitting diode and an integrated photon detectorcomposed of a photodiode and an open-collector output transistor. Separate connections are provided for thephotodiode bias and the transistor-collector output.This feature,which reduces the transistor base -to-collectorcapacitance, results in speeds up to one hundred times that of a conventional photo transistor optocoupler.The6N135 is designed for TTL/CMOS, TTL/LSTTL, and wide-band analog applications.The 6N136 and HCPL4502 aredesigned for high-speed TTL/TTL applications. The HCPL4502 has no base Connection.Compatible with TTL Inputs● High-Speed Switching . . . 1 Mbit/s Typ● Bandwidth . . . 2 MHz Typ● High Common-Mode Transient● Immunity . . . 1000 V/s Typ● High-Voltage Electrical● Insulation . . . 3000 Vdc Min● Open-Collector Output● UL Recognized . . . File Number 65085
● HIGH INPUT IMPEDANCE J-FET INPUTSTAGE● HIGH SPEED J-FET OP-AMPs : up to 20MHz,50V/μs● OFFSETVOLTAGEADJUSTMENT DOES NOTDEGRADE DRIFT OR COMMON-MODEREJECTION AS IN MOST OF MONOLITHICAMPLIFIERS● INTERNAL COMPENSATION AND LARGEDIFFERENTIALINPUTVOLTAGECAPABILITY(UPTO VCC+)TYPICAL APPLICATIONS● PRECISION HIGH SPEED INTEGRATORS● FAST D/A AND CONVERTERS● HIGH IMPEDANCE BUFFERS● WIDEBAND, LOW NOISE,LOW DRIFTAMPLIFIERS● LOGARITHIMIC AMPLIFIERS● PHOTOCELL AMPLIFIERS● SAMPLEAND HOLD CIRCUITSDESCRIPTIONThese circuits are monolithic J-FET input operationalamplifiers incorporating well matched, high voltageJ-FET on the same chip with standard bipolar transistors.This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltagedrift, coupledwith offset adjust which doesnotdegradedrift or common-mode rejection.The devices are also designed for high slew rate, widebandwidth,extremelyfastsettling time, low voltageandcurrent noise and a low 1/f noise level.